TPN3R704PL,L1QN-Channel 40 V 80A (Tc) 630mW (Ta), 86W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
1:$0.6240
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ABRmicro #.ABR2045-TPN3R7-1025113
ManufacturerToshiba Electronic Devices & Storage
MPN #.TPN3R704PL,L1Q
Estimated Lead Time12 Weeks
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Datasheet
TPN3R704PL(PDF)
TPN3R704PL(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.6240
Ext. Price$ 0.6240
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.6240$0.6240
10$0.5390$5.3870
100$0.3730$37.2940
500$0.3110$155.6560
1000$0.2650$264.5630
2000$0.2360$471.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesU-MOSIX-H
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberTPN3R704
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)27 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2500 pF @ 20 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature175°C
Maximum Power Dissipation630mW (Ta), 86W (Tc)
RDS(on) Drain-to-Source On Resistance3.7mOhm @ 40A, 10V
Package Type (Mfr.)8-TSON Advance (3.1x3.1)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.4V @ 200µA
Package / Case8-PowerVDFN
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TPN3R704PL,L1Q is an N-Channel MOSFET manufactured by Toshiba Electronic Devices & Storage. It is designed to handle a maximum voltage of 40 V and can carry a continuous current of up to 80A when mounted on a suitable heat-dissipating surface. The part is capable of dissipating 630mW in free air (Ta) and up to 86W when suitably heat-sinked (Tc). It features a low on-resistance of 3.7mOhm at 40A and 10V, ensuring efficient operation. The device is mounted in a compact 8-TSON Advance package, measuring 3.1 x 3.1 mm, making it suitable for space-constrained applications. It also has a gate threshold voltage of 2.4V at a 200µA current and can handle gate-source voltages up to ±20V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.