RN2310,LFPre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70
1:$0.1460
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ABRmicro #.ABR292-RN2310-910147
ManufacturerToshiba Electronic Devices & Storage
MPN #.RN2310,LF
Estimated Lead Time40 Weeks
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
* Quantity
Unit Price$0.1460
Ext. Price$0.1460
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.1460$0.1460
10$0.1020$1.0200
100$0.0550$5.5250
500$0.0440$21.7810
1000$0.0300$29.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberRN2310
Collector Current (Iᴄ)@25°C100 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Frequency - Transition200 MHz
Mounting StyleSurface Mount
Power - Max100 mW
Resistor - Base (R1)4.7 kOhms
Package Type (Mfr.)SC-70
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Collector-Emitter Breakdown Voltage (Max.)50 V
Package / CaseSC-70, SOT-323
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PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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Additional Details
The RN2310,LF is a surface mount pre-biased PNP bipolar junction transistor (BJT) manufactured by Toshiba Electronic Devices & Storage. It is designed to handle a collector-emitter voltage of up to 50 V and a collector current of 100 mA, with a power dissipation of 100 mW. The device features a current gain (hFE) of 120 at 1 mA, 5V, and a transition frequency of 200 MHz, which makes it suitable for high-frequency applications. The RN2310,LF also includes an integrated base resistor of 4.7 kOhms, reducing the need for external components and simplifying circuit design. Its low collector-base leakage current (ICBO) is rated at 100nA, ensuring stable performance in various applications. Packaged in an SC-70 form factor, it offers a compact solution for space-constrained circuits.
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