2SC3325-Y,LFBipolar (BJT) Transistor NPN 50 V 500 mA 300MHz 200 mW Surface Mount S-Mini
1:$0.2660
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ABRmicro #.ABR276-2SC332-907254
ManufacturerToshiba Electronic Devices & Storage
MPN #.2SC3325-Y,LF
Estimated Lead Time40 Weeks
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Datasheet
2SC3325~ (PDF)
2SC3325~ (PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
* Quantity
Unit Price$0.2660
Ext. Price$0.2660
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.2660$0.2660
10$0.1820$1.8170
100$0.0880$8.8190
500$0.0730$36.6560
1000$0.0510$51.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product Number2SC3325
Collector Current (Iᴄ)@25°C500 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA, 1V
Frequency - Transition300MHz
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Power - Max200 mW
Package Type (Mfr.)S-Mini
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Collector-Emitter Breakdown Voltage (Max.)50 V
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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Additional Details
The Toshiba 2SC3325-Y,LF is a surface-mount NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It operates with a maximum collector-emitter voltage of 50 V and a collector current of up to 500 mA. The transistor supports a frequency range up to 300MHz and handles a power dissipation of 200 mW, making it suitable for various high-frequency applications. The device exhibits a low collector cutoff current (ICBO) of 100nA, with a collector-emitter saturation voltage of 250mV at a collector current of 10mA and base current of 100mA. It offers a current gain (hFE) of 120 at a collector current of 100mA and collector-emitter voltage of 1V. The compact S-Mini package allows for efficient use in space-constrained designs.
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