TPCC8009,LQ(ON-Channel 30 V 24A (Ta) Surface Mount 8-TSON Advance (3.1x3.1)
N/A
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ABRmicro #.ABR278-TPCC80-904576
ManufacturerToshiba Electronic Devices & Storage
MPN #.TPCC8009,LQ(O
Estimated Lead Time-
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Datasheet
Mosfets Prod Gu... (PDF)
Mosfets Prod Gu... (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateDecember 23, 2024
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Technical Specifications
SeriesU-MOSIV
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberTPCC8009
Continuous Drain Current (ID) @ 25°C24A (Ta)
Drain-to-Source Voltage (VDS)30 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)26 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1270 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation-
RDS(on) Drain-to-Source On Resistance7mOhm @ 12A, 10V
Package Type (Mfr.)8-TSON Advance (3.1x3.1)
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 200µA
Package / Case8-PowerVDFN
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Datasheets
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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The TPCC8009,LQ(O) is a Toshiba Electronic Devices & Storage component characterized by its compact 8-TSON Advance package measuring 3.1x3.1 mm, suitable for surface mounting. This N-Channel MOSFET can handle up to 30 volts and 24 amperes (Ta), making it a robust choice for various electrical applications. It features a capacitance of 1270 pF at 10 volts and operates with a gate-source threshold voltage of 3V at 200µA. The TPCC8009's design is reflective of reliable performance under specified voltage and current conditions in electronic circuits.
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