TK22E10N1,S1XN-Channel 100 V 52A (Tc) 72W (Tc) Through Hole TO-220
1:$1.1180
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TK22E1-911028
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK22E10N1,S1X
Estimated Lead Time24 Weeks
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Datasheet
TK22E10N1(PDF)
TK22E10N1(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 1.1180
Ext. Price$ 1.1180
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1180$1.1180
50$0.8970$44.8500
100$0.7100$71.0000
500$0.6020$301.0000
1000$0.4910$491.0000
2000$0.4620$924.0000
5000$0.4400$2200.0000
10000$0.4310$4310.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesU-MOSVIII-H
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTK22E10
Continuous Drain Current (ID) @ 25°C52A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)28 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1800 pF @ 50 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation72W (Tc)
RDS(on) Drain-to-Source On Resistance13.8mOhm @ 11A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 300µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)