TK22E10N1,S1XN-Channel 100 V 52A (Tc) 72W (Tc) Through Hole TO-220
1:$1.1880
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-TK22E1-911028
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK22E10N1,S1X
Estimated Lead Time24 Weeks
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Datasheet
TK22E10N1 (PDF)
TK22E10N1 (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$1.1880
Ext. Price$1.1880
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1880$1.1880
50$0.9530$47.6530
100$0.7540$75.4380
500$0.6400$319.8130
1000$0.5220$521.6880
2000$0.4910$981.7500
5000$0.4680$2337.5000
10000$0.4580$4579.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesU-MOSVIII-H
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTK22E10
Continuous Drain Current (ID) @ 25°C52A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)28 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1800 pF @ 50 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation72W (Tc)
RDS(on) Drain-to-Source On Resistance13.8mOhm @ 11A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 300µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The TK22E10N1,S1X is a Toshiba N-Channel MOSFET featuring a maximum drain-source voltage of 100 V and a continuous drain current of 52A when mounted on a suitable heat sink. It has a power dissipation capability of 72W, also at the case temperature (Tc). This component, packaged in a TO-220 through-hole configuration, highlights a gate charge of 28 nC at a gate-source voltage of 10 V. Its on-resistance is measured at 13.8 mOhms when conducting a current of 11A with a gate-source voltage of 10V. The device supports a gate-to-source voltage rating of ±20V, making it suitable for various switching purposes.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.