RN2104(T5L,F,T)Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SSM
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ABRmicro #.ABR292-RN2104-907421
ManufacturerToshiba Electronic Devices & Storage
MPN #.RN2104(T5L,F,T)
Estimated Lead Time-
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Datasheet
RN2101-06 (PDF)
RN2101-06 (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberRN2104
Collector Current (Iᴄ)@25°C100 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition200 MHz
Mounting StyleSurface Mount
Power - Max100 mW
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)47 kOhms
Package Type (Mfr.)SSM
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Collector-Emitter Breakdown Voltage (Max.)50 V
Package / CaseSC-75, SOT-416
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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Additional Details
The RN2104(T5L,F,T) is a pre-biased bipolar junction transistor (BJT) designed by Toshiba Electronic Devices & Storage. It features a PNP configuration and is suited for surface mount applications. This transistor operates at a maximum voltage of 50 V and a continuous current of up to 100 mA, with a power dissipation of 100 mW. It offers a transition frequency of 200 MHz and includes built-in biasing resistors of 47 kOhms. Additionally, it achieves a voltage drop of 300mV at a collector current of 250µA and a base current of 5mA, with a minimal base-emitter leakage current of 500nA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.