Image is for reference only, the actual product serves as the standard.
SSM6N62TU,LFMosfet Array 20V 800mA (Ta) 500mW (Ta) Surface Mount UF6

1:$0.3330

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR289-SSM6N6-904412
MPN #.SSM6N62TU,LF
Estimated Lead Time26 Weeks
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 10864
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
* Quantity
Unit Price$0.3330
Ext. Price$0.3330
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3330$0.3330
10$0.2860$2.8580
100$0.1980$19.7630
500$0.1540$77.0310
1000$0.1250$125.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSSM6N62
Configuration2 N-Channel (Dual)
Continuous Drain Current (ID) @ 25°C800mA (Ta)
Drain-to-Source Voltage (VDS)20V
FET FeatureLogic Level Gate, 1.2V Drive
Gate Charge Total (Qg)(Max.)2nC @ 4.5V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)177pF @ 10V
Mounting StyleSurface Mount
Operating Temperature150°C
Power - Max500mW (Ta)
RDS(on) Drain-to-Source On Resistance85mOhm @ 800mA, 4.5V
Package Type (Mfr.)UF6
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 1mA
Package / Case6-SMD, Flat Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Related Parts
Bipolar (BJT) Transistor NPN 50 V 500 mA 300MHz 200 mW Surface Mount S-Mini
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SSM
RN2310,LF$0.1460
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70
P-Channel 20 V 100mA (Ta) 100mW (Ta) Surface Mount CST3
N-Channel 20 V 180mA (Ta) 100mW (Ta) Surface Mount CST3
N-Channel 100 V 52A (Tc) 72W (Tc) Through Hole TO-220
N-Channel 30 V 24A (Ta) Surface Mount 8-TSON Advance (3.1x3.1)
Additional Details
The SSM6N62TU,LF, manufactured by Toshiba Electronic Devices & Storage, is a surface mount MOSFET array designed for efficient operation within compact electronic systems. It features a maximum drain-source voltage of 20V and a continuous drain current of 800mA at a thermal limit of 500mW, as measured in a typical ambient environment (Ta). The device operates with a low threshold gate voltage of 1V at 1mA, suitable for logic level interfaces with 1.2V drive capability. Additionally, it exhibits a low gate charge of 2nC when driven at 4.5V, contributing to reduced switching losses. The compact UF6 package facilitates easy integration into surface-mounted circuit boards.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.