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SSM3J35CT,L3FP-Channel 20 V 100mA (Ta) 100mW (Ta) Surface Mount CST3
1:$0.2580
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SSM3J3-903397
ManufacturerToshiba Electronic Devices & Storage
MPN #.SSM3J35CT,L3F
Estimated Lead Time12 Weeks
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In Stock: 4345
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 0.2580
Ext. Price$ 0.2580
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.2580$0.2580
10$0.1780$1.7800
100$0.0870$8.7000
500$0.0730$36.5000
1000$0.0500$50.0000
2000$0.0440$88.0000
5000$0.0400$200.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 100 V 52A (Tc) 72W (Tc) Through Hole TO-220 Technical Specifications
Seriesπ-MOSVI
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSSM3J35
Continuous Drain Current (ID) @ 25°C100mA (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.2V, 4V
FET Feature-
FET TypeP-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)12.2 pF @ 3 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C
Maximum Power Dissipation100mW (Ta)
RDS(on) Drain-to-Source On Resistance8Ohm @ 50mA, 4V
Package Type (Mfr.)CST3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 1mA
Package / CaseSC-101, SOT-883
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)