SSM3J35CT,L3FP-Channel 20 V 100mA (Ta) 100mW (Ta) Surface Mount CST3
1:$0.2740
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-SSM3J3-903397
ManufacturerToshiba Electronic Devices & Storage
MPN #.SSM3J35CT,L3F
Estimated Lead Time12 Weeks
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
* Quantity
Unit Price$0.2740
Ext. Price$0.2740
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.2740$0.2740
10$0.1890$1.8910
100$0.0920$9.2440
500$0.0780$38.7810
1000$0.0530$53.1250
2000$0.0470$93.5000
5000$0.0430$212.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Seriesπ-MOSVI
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSSM3J35
Continuous Drain Current (ID) @ 25°C100mA (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.2V, 4V
FET Feature-
FET TypeP-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)12.2 pF @ 3 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C
Maximum Power Dissipation100mW (Ta)
RDS(on) Drain-to-Source On Resistance8Ohm @ 50mA, 4V
Package Type (Mfr.)CST3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 1mA
Package / CaseSC-101, SOT-883
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info@Abrmicro.com Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
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Additional Details
The Toshiba SSM3J35CT,L3F is a P-channel MOSFET designed for surface mount applications, housed in a compact CST3 package. It operates with a drain-source voltage of 20V and can handle a continuous drain current of 100mA at ambient temperature. The device features a low gate-source threshold voltage of 1V at 1mA, which makes it suitable for low voltage operations. With a power dissipation rating of 100mW under standard conditions, this MOSFET is intended for electronic circuits where space conservation is crucial. Its ability to operate with a gate-source voltage range of ±10V adds to its versatility in various electronic configurations.
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