SSM3K35CT,L3FN-Channel 20 V 180mA (Ta) 100mW (Ta) Surface Mount CST3
1:$0.2560
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-SSM3K3-903612
ManufacturerToshiba Electronic Devices & Storage
MPN #.SSM3K35CT,L3F
Estimated Lead Time12 Weeks
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 23, 2024
* Quantity
Unit Price$0.2560
Ext. Price$0.2560
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.2560$0.2560
10$0.1740$1.7430
100$0.0850$8.5000
500$0.0700$35.0630
1000$0.0490$48.8750
2000$0.0430$85.0000
5000$0.0390$196.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSSM3K35
Continuous Drain Current (ID) @ 25°C180mA (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.2V, 4V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9.5 pF @ 3 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C
Maximum Power Dissipation100mW (Ta)
RDS(on) Drain-to-Source On Resistance3Ohm @ 50mA, 4V
Package Type (Mfr.)CST3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 1mA
Package / CaseSC-101, SOT-883
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info@Abrmicro.com Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
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Additional Details
The SSM3K35CT,L3F is a surface-mount N-channel MOSFET manufactured by Toshiba Electronic Devices & Storage. This component is designed to handle a maximum voltage of 20V and a continuous drain current of 180mA at ambient temperature (Ta), with a power dissipation of 100mW. It features a gate-source voltage of ±10V and a gate capacitance of 9.5 pF when measured at 3V. Encased in a CST3 package, this MOSFET is suitable for compact electronic designs requiring reliable performance in controlling current flow.
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