TPN3300ANH,LQN-Channel 100 V 9.4A (Tc) 700mW (Ta), 27W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
1:$0.7180
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ABRmicro #.ABR2045-TPN330-1048033
ManufacturerToshiba Electronic Devices & Storage
MPN #.TPN3300ANH,LQ
Estimated Lead Time52 Weeks
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Datasheet
TPN3300ANH(PDF)
TPN3300ANH(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.7180
Ext. Price$ 0.7180
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7180$0.7180
10$0.5850$5.8540
100$0.4560$45.5810
500$0.3860$192.8440
1000$0.3150$314.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesU-MOSVIII-H
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberTPN3300
Continuous Drain Current (ID) @ 25°C9.4A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)880 pF @ 50 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation700mW (Ta), 27W (Tc)
RDS(on) Drain-to-Source On Resistance33mOhm @ 4.7A, 10V
Package Type (Mfr.)8-TSON Advance (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 100µA
Package / Case8-PowerVDFN
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TPN3300ANH,LQ is a Toshiba Electronic Devices & Storage component, specifically an N-Channel MOSFET designed for efficiency in power management. It operates at a maximum voltage of 100 V and a current of 9.4A when mounted on a suitable thermal conductive surface (Tc), with power dissipation capabilities of 700mW in open air (Ta) and 27W when adequately heat-sinked (Tc). This MOSFET is housed in a compact 8-TSON Advanced package measuring 3.3x3.3 mm, suitable for space-constrained applications. It features an input capacitance of 880 pF at 50 V, an on-resistance of 33 mOhm at a current of 4.7A and a gate-source voltage of 10V, along with a total gate charge of 11 nC at 10 V, indicating its optimized performance for efficient switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.