TPN2R503NC,L1QN-Channel 30 V 40A (Ta) 700mW (Ta), 35W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TPN2R5-945142
ManufacturerToshiba Electronic Devices & Storage
MPN #.TPN2R503NC,L1Q
Estimated Lead Time-
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
2SC3325-Y,LF$0.2660
Bipolar (BJT) Transistor NPN 50 V 500 mA 300MHz 200 mW Surface Mount S-Mini
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SSM
RN2310,LF$0.1460
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70
SSM3J35CT,L3F$0.2740
P-Channel 20 V 100mA (Ta) 100mW (Ta) Surface Mount CST3SSM3K35CT,L3F$0.2560
N-Channel 20 V 180mA (Ta) 100mW (Ta) Surface Mount CST3
SSM6N62TU,LF$0.3330
Mosfet Array 20V 800mA (Ta) 500mW (Ta) Surface Mount UF6N-Channel 30 V 24A (Ta) Surface Mount 8-TSON Advance (3.1x3.1)
Technical Specifications
SeriesU-MOSVIII
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberTPN2R503
Continuous Drain Current (ID) @ 25°C40A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2230 pF @ 15 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation700mW (Ta), 35W (Tc)
RDS(on) Drain-to-Source On Resistance2.5mOhm @ 20A, 10V
Package Type (Mfr.)8-TSON Advance (3.1x3.1)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.3V @ 500µA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
PCN Design/Specification
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TPN2R503NC,L1Q is an N-channel MOSFET manufactured by Toshiba Electronic Devices & Storage. It is designed with a maximum voltage rating of 30V and can handle a continuous drain current of 40A under specific thermal conditions. The part features a power dissipation capacity of 700mW in free air and 35W when mounted on a heat sink or similar thermal conduction setup. It comes in a compact surface mount package, specifically the 8-TSON Advance with dimensions of 3.1x3.1 mm. The MOSFET has a gate charge of 40 nC at 10V gate-to-source voltage, making it suitable for switching applications that require efficient power handling within its voltage and current limits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.