TPHR6503PL,L1QN-Channel 30 V 150A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5)
1:$1.6490
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TPHR65-1012137
ManufacturerToshiba Electronic Devices & Storage
MPN #.TPHR6503PL,L1Q
Estimated Lead Time32 Weeks
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Datasheet
TPHR6503PL(PDF)
TPHR6503PL(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.6490
Ext. Price$ 1.6490
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.6490$1.6490
10$1.3660$13.6640
100$1.0880$108.8000
500$0.9200$460.0630
1000$0.7810$780.9380
2000$0.7420$1483.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesU-MOSIX-H
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberTPHR6503
Continuous Drain Current (ID) @ 25°C150A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10000 pF @ 15 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature175°C
Maximum Power Dissipation960mW (Ta), 170W (Tc)
RDS(on) Drain-to-Source On Resistance0.65mOhm @ 50A, 10V
Package Type (Mfr.)8-SOP Advance (5x5)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.1V @ 1mA
Package / Case8-PowerVDFN
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TPHR6503PL,L1Q is an N-channel MOSFET manufactured by Toshiba Electronic Devices & Storage. It is designed to handle a maximum voltage of 30V and a continuous current of 150A when mounted on a suitable heatsink. The device features a power dissipation capability of 170W when properly mounted, and 960mW in a regular ambient temperature environment. It is housed in an 8-SOP Advance package, measuring 5x5 mm, making it suitable for surface mounting. The MOSFET also has a gate charge of 110 nC at 10V, facilitating efficient switching. Additionally, the device can withstand gate-to-source voltages up to ±20V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.