TPH8R903NL,LQN-Channel 30 V 20A (Tc) 1.6W (Ta), 24W (Tc) Surface Mount 8-SOP Advance (5x5)
1:$0.4580
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TPH8R9-917070
ManufacturerToshiba Electronic Devices & Storage
MPN #.TPH8R903NL,LQ
Estimated Lead Time52 Weeks
SampleGet Free Sample
Datasheet
TPH8R903NL(PDF)
TPH8R903NL(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 2205
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 13, 2024
* Quantity
Unit Price$ 0.4580
Ext. Price$ 0.4580
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4580$0.4580
10$0.3990$3.9900
100$0.2760$27.6000
500$0.2310$115.5000
1000$0.2160$216.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
2SC3325-Y,LF$0.2500
Bipolar (BJT) Transistor NPN 50 V 500 mA 300MHz 200 mW Surface Mount S-Mini
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SSM
RN2310,LF$0.1370
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70
SSM3J35CT,L3F$0.2580
P-Channel 20 V 100mA (Ta) 100mW (Ta) Surface Mount CST3SSM3K35CT,L3F$0.2410
N-Channel 20 V 180mA (Ta) 100mW (Ta) Surface Mount CST3
SSM6N62TU,LF$0.3130
Mosfet Array 20V 800mA (Ta) 500mW (Ta) Surface Mount UF6
N-Channel 30 V 24A (Ta) Surface Mount 8-TSON Advance (3.1x3.1)
Technical Specifications
SeriesU-MOSVIII-H
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberTPH8R903
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)9.8 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)820 pF @ 15 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation1.6W (Ta), 24W (Tc)
RDS(on) Drain-to-Source On Resistance8.9mOhm @ 10A, 10V
Package Type (Mfr.)8-SOP Advance (5x5)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.3V @ 1mA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)