TPH7R506NH,L1QN-Channel 60 V 22A (Ta) 1.6W (Ta), 45W (Tc) Surface Mount 8-SOP Advance (5x5)
1:$1.1710
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ABRmicro #.ABR2045-TPH7R5-1022509
ManufacturerToshiba Electronic Devices & Storage
MPN #.TPH7R506NH,L1Q
Estimated Lead Time52 Weeks
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Datasheet
TPH7R506NH(PDF)
TPH7R506NH(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.1710
Ext. Price$ 1.1710
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1710$1.1710
10$0.9620$9.6160
100$0.7470$74.6940
500$0.6340$317.1560
1000$0.5160$516.3750
2000$0.4870$973.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesU-MOSVIII-H
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberTPH7R506
Continuous Drain Current (ID) @ 25°C22A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)31 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2320 pF @ 30 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation1.6W (Ta), 45W (Tc)
RDS(on) Drain-to-Source On Resistance7.5mOhm @ 11A, 10V
Package Type (Mfr.)8-SOP Advance (5x5)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 300µA
Package / Case8-PowerVDFN
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TPH7R506NH,L1Q is a surface mount N-channel MOSFET manufactured by Toshiba Electronic Devices & Storage. It supports a maximum voltage of 60V and can handle a continuous current of up to 22A at a power dissipation of 1.6W in free-air conditions (Ta) or 45W when mounted on a standard thermal pad (Tc). This MOSFET is encapsulated in an 8-SOP Advance package measuring 5mm by 5mm, making it suitable for compact designs. It features a gate threshold voltage of 4V at a 300µA gate current, with a gate-to-source voltage tolerance of ±20V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.