TPH5900CNH,L1QN-Channel 150 V 9A (Ta) 1.6W (Ta), 42W (Tc) Surface Mount 8-SOP Advance (5x5)
1:$0.8040
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ABRmicro #.ABR2045-TPH590-1032898
ManufacturerToshiba Electronic Devices & Storage
MPN #.TPH5900CNH,L1Q
Estimated Lead Time32 Weeks
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Datasheet
TPH5900CNH(PDF)
TPH5900CNH(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.8040
Ext. Price$ 0.8040
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.8040$0.8040
10$0.6610$6.6090
100$0.5140$51.4250
500$0.4350$217.2810
1000$0.3550$354.8750
2000$0.3340$667.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesU-MOSVIII-H
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberTPH5900
Continuous Drain Current (ID) @ 25°C9A (Ta)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)600 pF @ 75 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation1.6W (Ta), 42W (Tc)
RDS(on) Drain-to-Source On Resistance59mOhm @ 4.5A, 10V
Package Type (Mfr.)8-SOP Advance (5x5)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 200µA
Package / Case8-PowerVDFN
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TPH5900CNH,L1Q is a surface-mount N-Channel MOSFET manufactured by Toshiba Electronic Devices & Storage. It features a maximum drain-source voltage of 150 V and a continuous drain current of 9 A at ambient temperature conditions, with a power dissipation capability of 1.6 W in free air and 42 W when mounted on a suitable heat sink. The device is housed in an 8-SOP Advance package with a footprint of 5x5 mm. It demonstrates a gate threshold voltage of 4 V at 200 µA and has a low on-state resistance of 59 mOhm when operating at a gate-source voltage of 10 V with a drain current of 4.5 A, making it efficient for switching operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.