TPH4R003NL,L1QN-Channel 30 V 40A (Tc) 1.6W (Ta), 36W (Tc) Surface Mount 8-SOP Advance (5x5)
1:$0.8550
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TPH4R0-981152
ManufacturerToshiba Electronic Devices & Storage
MPN #.TPH4R003NL,L1Q
Estimated Lead Time32 Weeks
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Datasheet
TPH4R003NL(PDF)
TPH4R003NL(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.8550
Ext. Price$ 0.8550
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.8550$0.8550
10$0.7010$7.0130
100$0.5460$54.6130
500$0.4620$231.0940
1000$0.3760$376.1250
2000$0.3540$707.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesU-MOSVIII-H
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberTPH4R003
Continuous Drain Current (ID) @ 25°C40A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14.8 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1400 pF @ 15 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation1.6W (Ta), 36W (Tc)
RDS(on) Drain-to-Source On Resistance4mOhm @ 20A, 10V
Package Type (Mfr.)8-SOP Advance (5x5)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.3V @ 200µA
Package / Case8-PowerVDFN
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TPH4R003NL,L1Q is a N-Channel MOSFET manufactured by Toshiba Electronic Devices & Storage. It features a drain-source voltage of 30V and supports a continuous drain current of 40A under conditions where the case temperature (Tc) is optimal. The device is designed for surface mounting, utilizing an 8-SOP Advance package with dimensions of 5x5 mm. With a power dissipation of 1.6W in ambient conditions (Ta) and 36W when mounted on a protective case (Tc), this MOSFET exhibits a total gate charge of 14.8 nC when driven at 10V and has a threshold voltage of 2.3V at a test current of 200µA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.