Image is for reference only, the actual product serves as the standard.
TPCA8120,LQ(CMP-Channel 30 V 45A (Ta) 1.6W (Ta), 45W (Tc) Surface Mount 8-SOP Advance (5x5)

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TPCA81-965757
MPN #.TPCA8120,LQ(CM
Estimated Lead Time-
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
Bipolar (BJT) Transistor NPN 50 V 500 mA 300MHz 200 mW Surface Mount S-Mini
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SSM
RN2310,LF$0.1460
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70
P-Channel 20 V 100mA (Ta) 100mW (Ta) Surface Mount CST3
N-Channel 20 V 180mA (Ta) 100mW (Ta) Surface Mount CST3
Mosfet Array 20V 800mA (Ta) 500mW (Ta) Surface Mount UF6
N-Channel 30 V 24A (Ta) Surface Mount 8-TSON Advance (3.1x3.1)
Technical Specifications
SeriesU-MOSVI
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberTPCA8120
Continuous Drain Current (ID) @ 25°C45A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)190 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7420 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation1.6W (Ta), 45W (Tc)
RDS(on) Drain-to-Source On Resistance3mOhm @ 22.5A, 10V
Package Type (Mfr.)8-SOP Advance (5x5)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)+20V, -25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 1mA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TPCA8120,LQ(CM) is a P-Channel MOSFET manufactured by Toshiba Electronic Devices & Storage, designed for efficient surface mounting in an 8-SOP Advance (5x5) package. It is capable of handling a maximum drain-source voltage of 30 V and a continuous drain current of 45 A at ambient temperature, delivering a power dissipation of 1.6W under the same conditions, and up to 45W with enhanced thermal conditions. The MOSFET features a low on-resistance of 3 mOhms at a drain current of 22.5A and a gate-source voltage of 10V, and can be driven with gate-source voltages starting from just 2V at 1mA. This combination of specifications makes it suitable for compact, high-efficiency electronic circuit designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.