TPCA8105(TE12L,Q,MP-Channel 12 V 6A (Ta) 1.6W (Ta), 20W (Tc) Surface Mount 8-SOP Advance (5x5)
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ABRmicro #.ABR2045-TPCA81-949123
ManufacturerToshiba Electronic Devices & Storage
MPN #.TPCA8105(TE12L,Q,M
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Datasheet
Mosfets Prod Guide(PDF)
Mosfets Prod Guide(PDF)
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Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberTPCA8105
Continuous Drain Current (ID) @ 25°C6A (Ta)
Drain-to-Source Voltage (VDS)12 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)18 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1600 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation1.6W (Ta), 20W (Tc)
RDS(on) Drain-to-Source On Resistance33mOhm @ 3A, 4.5V
Package Type (Mfr.)8-SOP Advance (5x5)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.2V @ 200µA
Package / Case8-PowerVDFN
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Datasheets
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TPCA8105(TE12L,Q,M is a surface mount P-Channel MOSFET manufactured by Toshiba Electronic Devices & Storage. It is characterized by its capacity to handle a drain-source voltage of 12V and a current of 6A (Ta), with power dissipation ratings of 1.6W (Ta) and 20W (Tc). Housed in an 8-SOP Advance package measuring 5x5mm, this MOSFET features a gate-source threshold voltage of 1.2V at a test current of 200µA. It is designed to be operated at gate-source voltages of 1.8V and 4.5V, making it suitable for various electronic designs requiring efficient switching.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.