ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
TPCA8023-H(TE12LQMN-Channel 30 V 21A (Ta) 1.6W (Ta), 30W (Tc) Surface Mount 8-SOP Advance (5x5)

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TPCA80-935379
ManufacturerToshiba Electronic Devices & Storage
MPN #.TPCA8023-H(TE12LQM
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetMosfets Prod Guide(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
2SC3325-Y,LF$0.2660
Toshiba Electronic Devices & Storage
Bipolar (BJT) Transistor NPN 50 V 500 mA 300MHz 200 mW Surface Mount S-Mini
RN2104(T5L,F,T)N/A
Toshiba Electronic Devices & Storage
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SSM
RN2310,LF$0.1460
Toshiba Electronic Devices & Storage
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70
SSM3J35CT,L3F$0.2740
Toshiba Electronic Devices & Storage
P-Channel 20 V 100mA (Ta) 100mW (Ta) Surface Mount CST3
SSM3K35CT,L3F$0.2560
Toshiba Electronic Devices & Storage
N-Channel 20 V 180mA (Ta) 100mW (Ta) Surface Mount CST3
SSM6N62TU,LF$0.3330
Toshiba Electronic Devices & Storage
Mosfet Array 20V 800mA (Ta) 500mW (Ta) Surface Mount UF6
TPCC8009,LQ(ON/A
Toshiba Electronic Devices & Storage
N-Channel 30 V 24A (Ta) Surface Mount 8-TSON Advance (3.1x3.1)
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberTPCA8023
Continuous Drain Current (ID) @ 25°C21A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)21 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2150 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation1.6W (Ta), 30W (Tc)
RDS(on) Drain-to-Source On Resistance12.9mOhm @ 11A, 10V
Package Type (Mfr.)8-SOP Advance (5x5)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 1mA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Mosfets Prod GuideTPCA8023-H
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TPCA8023-H(TE12LQM is a Toshiba N-Channel MOSFET designed for efficient power management in electronic devices. It operates at a maximum voltage of 30 V and can handle a continuous current of up to 21A when mounted on a suitable heatsink (specified at ambient temperature, Ta). This surface-mount semiconductor is housed in an 8-SOP Advance package, which measures 5x5 mm, offering a compact design suitable for space-constrained applications. The MOSFET exhibits a low on-resistance of 12.9 milliohms at 11A and 10V, ensuring minimal power loss during conduction. It also features a gate-source threshold voltage of 4.5V or 10V and withstands gate-source voltages up to ±20V, making it a flexible component for various voltage requirements.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.