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TPCA8003-H(TE12LQMN-Channel 30 V 35A (Ta) 1.6W (Ta), 45W (Tc) Surface Mount 8-SOP Advance (5x5)

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ABRmicro #.ABR2045-TPCA80-1007076
MPN #.TPCA8003-H(TE12LQM
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberTPCA8003
Continuous Drain Current (ID) @ 25°C35A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)25 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1465 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation1.6W (Ta), 45W (Tc)
RDS(on) Drain-to-Source On Resistance6.6mOhm @ 18A, 10V
Package Type (Mfr.)8-SOP Advance (5x5)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.3V @ 1mA
Package / Case8-PowerVDFN
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TPCA8003-H(TE12LQM is an N-Channel MOSFET developed by Toshiba Electronic Devices & Storage. It supports a voltage rating of 30V and a current capacity of 35A under ambient temperature conditions (Ta) with a power dissipation of 1.6W (Ta) and 45W when mounted on a heat-conductive medium (Tc). This surface mount component is housed in a compact 8-SOP Advance package measuring 5x5 mm. It exhibits a gate charge of 25 nC at 10V and can operate with gate-source voltages of 4.5V and 10V, withstanding voltages up to ±20V.
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