TPC8048-H(TE12L,Q)N-Channel 60 V 16A (Ta) 1W (Ta) Surface Mount 8-SOP (5.5x6.0)
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ABRmicro #.ABR2045-TPC804-945863
ManufacturerToshiba Electronic Devices & Storage
MPN #.TPC8048-H(TE12L,Q)
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Datasheet
Mosfets Prod Guide(PDF)
Mosfets Prod Guide(PDF)
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Packaging
Cut Tape (CT)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesU-MOSVI-H
Packaging
Cut Tape (CT)
Lifecycle StatusObsolete
Base Product NumberTPC8048
Continuous Drain Current (ID) @ 25°C16A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)87 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7540 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation1W (Ta)
RDS(on) Drain-to-Source On Resistance6.9mOhm @ 8A, 10V
Package Type (Mfr.)8-SOP (5.5x6.0)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.3V @ 1mA
Package / Case8-SOIC (0.173", 4.40mm Width)
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Datasheets
Product Drawings
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TPC8048-H(TE12L,Q) is an N-Channel MOSFET manufactured by Toshiba Electronic Devices & Storage. It features a voltage rating of 60V and a current capability of 16A, with a dissipation power of 1W, making it suitable for efficient power control in compact spaces. The part is housed in an 8-SOP surface mount package, measuring 5.5x6.0mm. With a gate threshold voltage of 2.3V at a gate current of 1mA, this MOSFET also supports a gate-source voltage of up to ±20V, providing reliable performance in a variety of electronic circuits.
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