TPC6111(TE85L,F,M)P-Channel 20 V 5.5A (Ta) 700mW (Ta) Surface Mount VS-6 (2.9x2.8)
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ABRmicro #.ABR2045-TPC611-1022238
ManufacturerToshiba Electronic Devices & Storage
MPN #.TPC6111(TE85L,F,M)
Estimated Lead Time-
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Datasheet
Mosfets Prod Guide(PDF)
Mosfets Prod Guide(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesU-MOSV
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberTPC6111
Continuous Drain Current (ID) @ 25°C5.5A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)10 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)700 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation700mW (Ta)
RDS(on) Drain-to-Source On Resistance40mOhm @ 2.8A, 4.5V
Package Type (Mfr.)VS-6 (2.9x2.8)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 1mA
Package / CaseSOT-23-6 Thin, TSOT-23-6
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Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The TPC6111(TE85L,F,M) is a P-Channel MOSFET manufactured by Toshiba Electronic Devices & Storage. It is designed for surface mounting with its compact VS-6 package dimensions of 2.9x2.8 mm. This MOSFET can handle a voltage of up to 20V and a current of 5.5A under certain conditions, with a power dissipation capability of 700mW. It has threshold voltages of 1.5V and 4.5V and features an input capacitance of 10 nC at 5 V, making it a suitable choice for tasks requiring efficient electrical control.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.