TK8S06K3L(T6L1,NQ)N-Channel 60 V 8A (Ta) 25W (Tc) Surface Mount DPAK+
1:$1.0000
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ABRmicro #.ABR2045-TK8S06-939031
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK8S06K3L(T6L1,NQ)
Estimated Lead Time32 Weeks
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.0000
Ext. Price$ 1.0000
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.0000$1.0000
10$0.8210$8.2130
100$0.6390$63.8560
500$0.5410$270.4060
1000$0.4410$440.9380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesU-MOSIV
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberTK8S06
Continuous Drain Current (ID) @ 25°C8A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)10 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)400 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature175°C (TJ)
Maximum Power Dissipation25W (Tc)
RDS(on) Drain-to-Source On Resistance54mOhm @ 4A, 10V
Package Type (Mfr.)DPAK+
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 1mA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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info@Abrmicro.com Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK8S06K3L(T6L1,NQ) is a high-performance N-Channel MOSFET manufactured by Toshiba Electronic Devices & Storage. Designed for efficiency and reliability, it is capable of handling up to 60 V and 8A (Ta), with a power dissipation of 25W (Tc) in a versatile surface-mount DPAK+ package. This MOSFET features a gate charge of 10 nC at 10 V and a drain-source capacitance of 400 pF at the same voltage, making it suitable for various high-speed and high-efficiency switching applications.
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