TK8P60W5,RVQN-Channel 600 V 8A (Ta) 80W (Tc) Surface Mount DPAK
1:$0.9140
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ABRmicro #.ABR2045-TK8P60-1039244
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK8P60W5,RVQ
Estimated Lead Time24 Weeks
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Datasheet
TK8P60W5(PDF)
TK8P60W5(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.9140
Ext. Price$ 0.9140
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.9140$0.9140
10$0.7620$7.6180
100$0.6060$60.5630
500$0.5460$273.0630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesDTMOSIV
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberTK8P60
Continuous Drain Current (ID) @ 25°C8A (Ta)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)590 pF @ 300 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation80W (Tc)
RDS(on) Drain-to-Source On Resistance560mOhm @ 4A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 400µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK8P60W5,RVQ is a semiconductor device manufactured by Toshiba Electronic Devices & Storage, designed as an N-Channel MOSFET. It operates with a maximum voltage of 600 V and can handle a current of 8A under certain thermal conditions. The device is housed in a surface mount DPAK package and offers a power dissipation capability of up to 80W when mounted on a suitable surface. It features a low on-resistance of 560mOhm at a gate voltage of 10V and a load current of 4A, ensuring efficient performance. Additionally, the MOSFET requires a gate-source threshold voltage of 4.5V at a gate current of 400µA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.