TK8A10K3,S5QN-Channel 100 V 8A (Ta) 18W (Tc) Through Hole TO-220SIS
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ABRmicro #.ABR2045-TK8A10-931926
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK8A10K3,S5Q
Estimated Lead Time-
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Datasheet
TK8A10K3 Datasheet(PDF)
TK8A10K3 Datasheet(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesU-MOSIV
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberTK8A10
Continuous Drain Current (ID) @ 25°C8A (Ta)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12.9 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)530 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation18W (Tc)
RDS(on) Drain-to-Source On Resistance120mOhm @ 4A, 10V
Package Type (Mfr.)TO-220SIS
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3 Full Pack
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Datasheets
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The part with designation TK8A10K3,S5Q, manufactured by Toshiba Electronic Devices & Storage, is an N-Channel MOSFET housed in a TO-220SIS package. It is designed to handle a maximum drain-source voltage of 100 volts and supports a continuous current of up to 8 amps at proper conditions. The device can dissipate up to 18 watts of power with adequate thermal management. It features a gate charge of 12.9 nanocoulombs at 10 volts and input capacitance of 530 picofarads at the same gate-source voltage, indicating its switching characteristics and gate drive requirements for efficient operation in electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.