TK7P60W5,RVQN-Channel 600 V 7A (Ta) 60W (Tc) Surface Mount DPAK
1:$1.2740
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ABRmicro #.ABR2045-TK7P60-972759
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK7P60W5,RVQ
Estimated Lead Time52 Weeks
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Datasheet
TK7P60W5(PDF)
TK7P60W5(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.2740
Ext. Price$ 1.2740
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2740$1.2740
10$1.0570$10.5720
100$0.8420$84.1500
500$0.7120$355.9380
1000$0.6050$604.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesDTMOSIV
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberTK7P60
Continuous Drain Current (ID) @ 25°C7A (Ta)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)16 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)490 pF @ 300 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation60W (Tc)
RDS(on) Drain-to-Source On Resistance670mOhm @ 3.5A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 350µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK7P60W5,RVQ is a surface mount N-Channel MOSFET manufactured by Toshiba Electronic Devices & Storage. This component is designed to handle a maximum voltage of 600V and a current of 7A (Ta). With a power dissipation capacity of 60W (Tc), it is housed in a DPAK package, which is conducive to efficient thermal management. The MOSFET features a gate charge of 16 nC at 10 V, and a typical on-resistance of 670 mOhm at 3.5A, 10V, ensuring reliable performance. Additionally, it has an input capacitance of 490 pF measured at 300 V, making it suitable for a variety of electronic applications that require precise control of high voltage circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.