TK7A50D(STA4,Q,M)N-Channel 500 V 7A (Ta) 35W (Tc) Through Hole TO-220SIS
1:$1.1960
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TK7A50-940521
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK7A50D(STA4,Q,M)
Estimated Lead Time20 Weeks
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Datasheet
TK7A50D(PDF)
TK7A50D(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.1960
Ext. Price$ 1.1960
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1960$1.1960
50$0.9590$47.9720
100$0.7610$76.0750
500$0.6440$321.9380
1000$0.5240$523.8130
2000$0.4940$988.1250
5000$0.4710$2353.4380
10000$0.4620$4621.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Seriesπ-MOSVII
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTK7A50
Continuous Drain Current (ID) @ 25°C7A (Ta)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)600 pF @ 25 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation35W (Tc)
RDS(on) Drain-to-Source On Resistance1.22Ohm @ 3.5A, 10V
Package Type (Mfr.)TO-220SIS
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.4V @ 1mA
Package / CaseTO-220-3 Full Pack
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK7A50D(STA4,Q,M) is an N-Channel MOSFET manufactured by Toshiba Electronic Devices & Storage. It is designed for through-hole mounting in a TO-220SIS package. The device is capable of handling a maximum voltage of 500 V and a current of 7 A at a junction temperature of 35 W (Tc). It features a gate-source voltage of ±30V, a typical input capacitance of 600 pF at 25 V, and a gate charge of 12 nC at 10 V.
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