TK70D06J1(Q)N-Channel 60 V 70A (Ta) 45W (Tc) Through Hole TO-220(W)
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ABRmicro #.ABR2045-TK70D0-927517
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK70D06J1(Q)
Estimated Lead Time-
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Datasheet
TK70A06J1(PDF)
TK70A06J1(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberTK70
Continuous Drain Current (ID) @ 25°C70A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)87 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5450 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation45W (Tc)
RDS(on) Drain-to-Source On Resistance6.4mOhm @ 35A, 10V
Package Type (Mfr.)TO-220(W)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.3V @ 1mA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK70D06J1(Q) is an N-Channel MOSFET manufactured by Toshiba Electronic Devices & Storage. Designed for through-hole mounting, it features a TO-220 package and is capable of handling up to 60 volts and 70 amperes. The device can dissipate 45 watts of power under specified conditions. It operates with a gate-to-source voltage of ±20V and has a gate threshold voltage of 2.3V at 1mA. This MOSFET is suitable for handling moderate power levels with a robust and reliable design.
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