TK6A65D(STA4,Q,M)N-Channel 650 V 6A (Ta) 45W (Tc) Through Hole TO-220SIS
1:$1.5470
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ABRmicro #.ABR2045-TK6A65-1038295
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK6A65D(STA4,Q,M)
Estimated Lead Time20 Weeks
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Datasheet
TK6A65D(PDF)
TK6A65D(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.5470
Ext. Price$ 1.5470
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.5470$1.5470
50$1.2450$62.2630
100$1.0240$102.4250
500$0.8670$433.5000
1000$0.7350$735.2500
2000$0.6980$1396.1250
5000$0.6730$3362.8130
10000$0.6700$6704.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Seriesπ-MOSVII
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTK6A65
Continuous Drain Current (ID) @ 25°C6A (Ta)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1050 pF @ 25 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation45W (Tc)
RDS(on) Drain-to-Source On Resistance1.11Ohm @ 3A, 10V
Package Type (Mfr.)TO-220SIS
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3 Full Pack
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Datasheets
Product Drawings
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK6A65D(STA4,Q,M) is a semiconductor device manufactured by Toshiba Electronic Devices & Storage. It is an N-Channel MOSFET designed for use in high-voltage applications, offering a drain-source voltage capability of 650 V and a continuous drain current of 6 A at ambient temperature (Ta). The device is housed in a TO-220SIS package suited for through-hole mounting, and it features a power dissipation of 45 W when mounted to a suitable heatsink (Tc). Additional electrical characteristics include gate-source voltage tolerance of ±30 V, a gate threshold voltage of 10 V, and an input capacitance of 1050 pF at 25 V.
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