TK6A60D(STA4,Q,M)N-Channel 600 V 6A (Ta) 40W (Tc) Through Hole TO-220SIS
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ABRmicro #.ABR2045-TK6A60-1012858
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK6A60D(STA4,Q,M)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
Seriesπ-MOSVII
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberTK6A60
Continuous Drain Current (ID) @ 25°C6A (Ta)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)16 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)800 pF @ 25 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation40W (Tc)
RDS(on) Drain-to-Source On Resistance1.25Ohm @ 3A, 10V
Package Type (Mfr.)TO-220SIS
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3 Full Pack
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Product Drawings
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK6A60D(STA4,Q,M) is a semiconductor component manufactured by Toshiba Electronic Devices & Storage, characterized as an N-Channel MOSFET. It is designed for high-voltage applications and features a 600V drain-source voltage rating and a continuous current rating of 6A at ambient temperature (Ta). The device can dissipate up to 40W at case temperature (Tc) and is encapsulated in a TO-220SIS through-hole package, facilitating effective thermal management and ease of mounting on PCBs. This MOSFET operates with a gate-source voltage of 10V and has a maximum gate threshold voltage of ±30V, with a typical gate charge voltage of 4V at a current of 1mA.
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