TK6A45DA(STA4,Q,M)N-Channel 450 V 5.5A (Ta) Through Hole TO-220SIS
1:$1.0000
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TK6A45-934417
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK6A45DA(STA4,Q,M)
Estimated Lead Time20 Weeks
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For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.0000
Ext. Price$ 1.0000
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.0000$1.0000
50$0.8040$40.2160
100$0.6360$63.6440
500$0.5400$269.8750
1000$0.4400$439.8750
2000$0.4130$826.6250
5000$0.3940$1970.9380
10000$0.3870$3867.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Seriesπ-MOSVII
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTK6A45
Continuous Drain Current (ID) @ 25°C5.5A (Ta)
Drain-to-Source Voltage (VDS)450 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)490 pF @ 25 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation-
RDS(on) Drain-to-Source On Resistance1.35Ohm @ 2.8A, 10V
Package Type (Mfr.)TO-220SIS
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.4V @ 1mA
Package / CaseTO-220-3 Full Pack
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info@Abrmicro.com Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)