TK5P53D(T6RSS-Q)N-Channel 525 V 5A (Ta) 80W (Tc) Surface Mount DPAK
1:$1.0680
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ABRmicro #.ABR2045-TK5P53-988994
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK5P53D(T6RSS-Q)
Estimated Lead Time52 Weeks
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Datasheet
TK5P53D(PDF)
TK5P53D(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.0680
Ext. Price$ 1.0680
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.0680$1.0680
10$0.8730$8.7340
100$0.6790$67.8940
500$0.5760$287.9380
1000$0.4690$468.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberTK5P53
Continuous Drain Current (ID) @ 25°C5A (Ta)
Drain-to-Source Voltage (VDS)525 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)540 pF @ 25 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation80W (Tc)
RDS(on) Drain-to-Source On Resistance1.5Ohm @ 2.5A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.4V @ 1mA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK5P53D(T6RSS-Q) is a semiconductor device manufactured by Toshiba Electronic Devices & Storage, designed as an N-channel MOSFET. It operates with a drain-source voltage of 525 volts and supports a continuous drain current of 5 amperes at a specific ambient temperature (Ta). The power dissipation is rated at 80 watts when mounted on a specified thermal environment (Tc). Encapsulated in a DPAK surface mount package, this MOSFET features a gate charge of 11 nanocoulombs at 10 volts and exhibits an on-resistance of 1.5 ohms at a drain current of 2.5 amperes and gate-source voltage of 10 volts.
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