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TK560P60Y,RQN-Channel 600 V 7A (Tc) 60W (Tc) Surface Mount DPAK

1:$1.1630

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TK560P-972351
MPN #.TK560P60Y,RQ
Estimated Lead Time24 Weeks
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In Stock: 3889
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.1630
Ext. Price$ 1.1630
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1630$1.1630
10$0.9520$9.5200
100$0.7410$74.0560
500$0.6280$313.9690
1000$0.5110$511.0630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesDTMOSV
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberTK560P60
Continuous Drain Current (ID) @ 25°C7A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)380 pF @ 300 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation60W (Tc)
RDS(on) Drain-to-Source On Resistance560mOhm @ 3.5A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 240µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK560P60Y,RQ is a semiconductor device manufactured by Toshiba Electronic Devices & Storage. It is an N-channel MOSFET designed for efficient switching and amplification in electronic circuits. This particular model can handle a maximum voltage of 600 V and a current of up to 7A, when measured at the case temperature (Tc). It is capable of dissipating 60W of power under the same conditions. The part comes in a compact DPAK surface-mount package, which is suitable for miniaturized electronic assemblies. It features a gate-source voltage threshold of 4V at 240µA and has a typical input capacitance of 380 pF at 300 V, making it suitable for high-voltage and high-speed applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.