TK55D10J1(Q)N-Channel 100 V 55A (Ta) 140W (Tc) Through Hole TO-220(W)
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ABRmicro #.ABR2045-TK55D1-956540
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK55D10J1(Q)
Estimated Lead Time-
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Datasheet
TK55D10J1(PDF)
TK55D10J1(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberTK55D10
Continuous Drain Current (ID) @ 25°C55A (Ta)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5700 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation140W (Tc)
RDS(on) Drain-to-Source On Resistance10.5mOhm @ 27A, 10V
Package Type (Mfr.)TO-220(W)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.3V @ 1mA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK55D10J1(Q) is an N-channel MOSFET produced by Toshiba Electronic Devices & Storage. It is designed to handle a drain-source voltage of up to 100 V and supports a continuous drain current of 55 A, making it suitable for high-power applications. This transistor is housed in a TO-220(W) package, allowing for efficient heat dissipation with a power dissipation rating of 140 W when properly mounted. It features an input capacitance of 5700 pF at 10 V, indicating its capability for switching applications. Additionally, it has a gate-source voltage rating of ±20 V, providing robustness against voltage variations.
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