TK4R4P06PL,RQN-Channel 60 V 58A (Tc) 87W (Tc) Surface Mount DPAK
1:$1.1540
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TK4R4P-981071
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK4R4P06PL,RQ
Estimated Lead Time24 Weeks
SampleGet Free Sample
Datasheet
TK4R4P06PL(PDF)
TK4R4P06PL(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 2310
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.1540
Ext. Price$ 1.1540
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1540$1.1540
10$0.9460$9.4560
100$0.7350$73.5250
500$0.6230$311.3130
1000$0.5080$507.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
2SC3325-Y,LF$0.2660
Bipolar (BJT) Transistor NPN 50 V 500 mA 300MHz 200 mW Surface Mount S-Mini
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SSM
RN2310,LF$0.1460
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70
SSM3J35CT,L3F$0.2740
P-Channel 20 V 100mA (Ta) 100mW (Ta) Surface Mount CST3SSM3K35CT,L3F$0.2560
N-Channel 20 V 180mA (Ta) 100mW (Ta) Surface Mount CST3
SSM6N62TU,LF$0.3330
Mosfet Array 20V 800mA (Ta) 500mW (Ta) Surface Mount UF6
N-Channel 30 V 24A (Ta) Surface Mount 8-TSON Advance (3.1x3.1)
Technical Specifications
SeriesU-MOSIX-H
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberTK4R4P06
Continuous Drain Current (ID) @ 25°C58A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)48.2 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3280 pF @ 30 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature175°C
Maximum Power Dissipation87W (Tc)
RDS(on) Drain-to-Source On Resistance4.4mOhm @ 29A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 500µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK4R4P06PL,RQ from Toshiba Electronic Devices & Storage is a surface-mount N-Channel MOSFET designed for efficient power management. It operates with a voltage rating of 60V and can handle a continuous current of 58A, with a maximum power dissipation of 87W when mounted on a suitable heat sink (Tc). The device features a gate-source voltage tolerance of ±20V and has a total gate charge of 48.2 nC at a gate drive of 10V. It also exhibits an input capacitance of 3280 pF at 30V. Encased in a DPAK package, it is suitable for compact designs requiring reliable performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.