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TK4P50D(T6RSS-Q)N-Channel 500 V 4A (Ta) 80W (Tc) Surface Mount DPAK

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ABRmicro #.ABR278-TK4P50-919082
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK4P50D(T6RSS-Q)
Estimated Lead Time-
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DatasheetDatasheetTK4P50D (PDF)
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In Stock: 104
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateDecember 24, 2024
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Technical Specifications
Seriesπ-MOSVII
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberTK4P50
Continuous Drain Current (ID) @ 25°C4A (Ta)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)9 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)380 pF @ 25 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Maximum Power Dissipation80W (Tc)
RDS(on) Drain-to-Source On Resistance2Ohm @ 2A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.4V @ 1mA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
TK4P50D
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The TK4P50D(T6RSS-Q) is an N-Channel MOSFET produced by Toshiba Electronic Devices & Storage. It offers a 500 V drain-source voltage and can handle a current of 4A (Ta) with a power dissipation capacity of 80W (Tc), making it suitable for a variety of electrical tasks requiring efficient power control. Designed for surface mounting, it is housed in a DPAK package. The MOSFET exhibits an on-resistance of 2 Ohms at a drain current of 2A and a gate voltage of 10V, with a gate charge of 9 nC at the same voltage. It also features a threshold voltage of 4.4V at 1mA.
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