TK40E10K3,S1X(SN-Channel 100 V 40A (Ta) Through Hole TO-220-3
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ABRmicro #.ABR278-TK40E1-913659
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK40E10K3,S1X(S
Estimated Lead Time-
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Datasheet
Mosfets Prod Gu... (PDF)
Mosfets Prod Gu... (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
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Shipping DateDecember 24, 2024
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Technical Specifications
SeriesU-MOSIV
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberTK40E10
Continuous Drain Current (ID) @ 25°C40A (Ta)
Drain-to-Source Voltage (VDS)100 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)84 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4000 pF @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature-
Maximum Power Dissipation-
RDS(on) Drain-to-Source On Resistance15mOhm @ 20A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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