TK40E06N1,S1XN-Channel 60 V 40A (Ta) 67W (Tc) Through Hole TO-220
1:$0.8290
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TK40E0-1014624
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK40E06N1,S1X
Estimated Lead Time24 Weeks
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Datasheet
TK40E06N1(PDF)
TK40E06N1(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.8290
Ext. Price$ 0.8290
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.8290$0.8290
50$0.6650$33.2560
100$0.5280$52.8060
500$0.4470$223.6560
1000$0.3640$364.4380
2000$0.3430$686.3750
5000$0.3260$1630.9380
10000$0.3210$3208.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesU-MOSVIII-H
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTK40E06
Continuous Drain Current (ID) @ 25°C40A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)23 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1700 pF @ 30 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation67W (Tc)
RDS(on) Drain-to-Source On Resistance10.4mOhm @ 20A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 300µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Toshiba TK40E06N1,S1X is an N-channel MOSFET characterized by a 60V drain-source voltage and a continuous drain current of 40A in a TO-220 through-hole package. It offers a power dissipation of 67W when mounted with proper thermal management. The part features a total gate charge of 23 nC at 10V and a typical gate threshold voltage of 4V at a drain current of 300µA. Additionally, it can handle transient voltages up to ±20V, making it suitable for high-efficiency power switching applications.
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