TK39N60W5,S1VFN-Channel 600 V 38.8A (Ta) 270W (Tc) Through Hole TO-247
1:$5.3600
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TK39N6-1036383
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK39N60W5,S1VF
Estimated Lead Time24 Weeks
SampleGet Free Sample
Datasheet
TK39N60W5(PDF)
TK39N60W5(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 2004
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 5.3600
Ext. Price$ 5.3600
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.3600$5.3600
30$4.2500$127.5000
120$3.6430$437.1980
510$3.2390$1651.6350
1020$2.7730$2828.5880
2010$2.6120$5249.3660
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
2SC3325-Y,LF$0.2660
Bipolar (BJT) Transistor NPN 50 V 500 mA 300MHz 200 mW Surface Mount S-Mini
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SSM
RN2310,LF$0.1460
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70
SSM3J35CT,L3F$0.2740
P-Channel 20 V 100mA (Ta) 100mW (Ta) Surface Mount CST3SSM3K35CT,L3F$0.2560
N-Channel 20 V 180mA (Ta) 100mW (Ta) Surface Mount CST3
SSM6N62TU,LF$0.3330
Mosfet Array 20V 800mA (Ta) 500mW (Ta) Surface Mount UF6
N-Channel 30 V 24A (Ta) Surface Mount 8-TSON Advance (3.1x3.1)
Technical Specifications
SeriesDTMOSIV
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTK39N60
Continuous Drain Current (ID) @ 25°C38.8A (Ta)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)135 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4100 pF @ 300 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation270W (Tc)
RDS(on) Drain-to-Source On Resistance74mOhm @ 19.4A, 10V
Package Type (Mfr.)TO-247
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 1.9mA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK39N60W5,S1VF is an N-channel MOSFET manufactured by Toshiba Electronic Devices & Storage. It is designed to handle a maximum voltage of 600 V and a continuous current of 38.8A when measured at Ta, with a power dissipation capability of 270W at Tc. The device comes in a TO-247 package, making it suitable for through-hole mounting. It features a capacitance of 4100 pF at 300 V and a total gate charge of 135 nC at 10 V, indicating its performance characteristics in managing high power and fast switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.