TK39J60W,S1VQN-Channel 600 V 38.8A (Ta) 270W (Tc) Through Hole TO-3P(N)
1:$8.5560
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ABRmicro #.ABR2045-TK39J6-1005688
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK39J60W,S1VQ
Estimated Lead Time52 Weeks
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Datasheet
TK39J60W(PDF)
TK39J60W(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 8.5560
Ext. Price$ 8.5560
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$8.5560$8.5560
25$6.8290$170.7170
100$6.1090$610.9380
500$5.3910$2695.5630
1000$4.8520$4852.4380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesDTMOSIV
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTK39J60
Continuous Drain Current (ID) @ 25°C38.8A (Ta)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4100 pF @ 300 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation270W (Tc)
RDS(on) Drain-to-Source On Resistance65mOhm @ 19.4A, 10V
Package Type (Mfr.)TO-3P(N)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.7V @ 1.9mA
Package / CaseTO-3P-3, SC-65-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationPending Vendor Confirmation
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK39J60W,S1VQ, manufactured by Toshiba Electronic Devices & Storage, is an N-Channel MOSFET designed for high voltage and current applications. It features a drain-source voltage rating of 600 V and can handle a maximum current of 38.8A (Ta). The part comes in a TO-3P(N) through-hole package, capable of dissipating power up to 270W at the case (Tc). It requires a gate-source voltage of 10V, and has a total gate charge of 110 nC at 10 V, making it well-suited for efficient power switching tasks.
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