TK34E10N1,S1XN-Channel 100 V 75A (Tc) 103W (Tc) Through Hole TO-220
1:$1.2650
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TK34E1-929131
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK34E10N1,S1X
Estimated Lead Time24 Weeks
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Datasheet
TK34E10N1(PDF)
TK34E10N1(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.2650
Ext. Price$ 1.2650
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2650$1.2650
50$1.0170$50.8410
100$0.8060$80.6440
500$0.6830$341.5940
1000$0.5560$555.6880
2000$0.5240$1047.6250
5000$0.4990$2496.8750
10000$0.4890$4887.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesU-MOSVIII-H
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTK34E10
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)38 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2600 pF @ 50 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation103W (Tc)
RDS(on) Drain-to-Source On Resistance9.5mOhm @ 17A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 500µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK34E10N1,S1X is a robust semiconductor component manufactured by Toshiba Electronic Devices & Storage, designed as an N-Channel MOSFET. It has a voltage rating of 100V and can handle a current of 75A when properly mounted, with a power dissipation capacity of 103W. This component is encapsulated in a TO-220 package, suitable for through-hole mounting. It exhibits a low gate charge of 38 nC at 10V and a threshold voltage of 4V at 500µA. Additionally, it offers a low on-resistance of 9.5 mOhm when carrying a current of 17A at 10V, making it efficient for various switching operations.
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