TK32E12N1,S1XN-Channel 120 V 60A (Tc) 98W (Tc) Through Hole TO-220
1:$1.2230
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TK32E1-971412
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK32E12N1,S1X
Estimated Lead Time24 Weeks
SampleGet Free Sample
Datasheet
TK32E12N1(PDF)
TK32E12N1(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 86
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.2230
Ext. Price$ 1.2230
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2230$1.2230
50$0.9840$49.1940
100$0.7790$77.8810
500$0.6610$330.4380
1000$0.5390$538.6880
2000$0.5070$1013.6250
5000$0.4820$2411.8750
10000$0.4730$4728.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
2SC3325-Y,LF$0.2660
Bipolar (BJT) Transistor NPN 50 V 500 mA 300MHz 200 mW Surface Mount S-Mini
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SSM
RN2310,LF$0.1460
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70
SSM3J35CT,L3F$0.2740
P-Channel 20 V 100mA (Ta) 100mW (Ta) Surface Mount CST3SSM3K35CT,L3F$0.2560
N-Channel 20 V 180mA (Ta) 100mW (Ta) Surface Mount CST3
SSM6N62TU,LF$0.3330
Mosfet Array 20V 800mA (Ta) 500mW (Ta) Surface Mount UF6
N-Channel 30 V 24A (Ta) Surface Mount 8-TSON Advance (3.1x3.1)
Technical Specifications
SeriesU-MOSVIII-H
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTK32E12
Continuous Drain Current (ID) @ 25°C60A (Tc)
Drain-to-Source Voltage (VDS)120 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)34 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2000 pF @ 60 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation98W (Tc)
RDS(on) Drain-to-Source On Resistance13.8mOhm @ 16A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 500µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK32E12N1,S1X from Toshiba Electronic Devices & Storage is a robust N-Channel MOSFET designed for efficient power management. It features a voltage rating of 120V and can handle a continuous current of 60A with a power dissipation capacity of 98W, making it suitable for high-power applications. Housed in a TO-220 package, this component provides convenient through-hole mounting. Its input capacitance measures 2000 pF at 60V, and it has a gate charge of 34 nC at 10V, indicating a responsive switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.