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TK31N60W5,S1VFN-Channel 600 V 30.8A (Ta) 230W (Tc) Through Hole TO-247

1:$5.6500

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TK31N6-995431
MPN #.TK31N60W5,S1VF
Estimated Lead Time24 Weeks
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In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 5.6500
Ext. Price$ 5.6500
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.6500$5.6500
30$4.5090$135.2780
120$4.0340$484.1180
510$3.5590$1815.2810
1020$3.2030$3267.5060
2010$3.0270$6084.3960
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesDTMOSIV
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTK31N60
Continuous Drain Current (ID) @ 25°C30.8A (Ta)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)105 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3000 pF @ 300 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation230W (Tc)
RDS(on) Drain-to-Source On Resistance99mOhm @ 15.4A, 10V
Package Type (Mfr.)TO-247
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 1.5mA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK31N60W5,S1VF is a N-Channel MOSFET produced by Toshiba Electronic Devices & Storage. It is designed to handle high voltages and currents, evident from its specifications of 600 V and 30.8 A (Ta) current capacity, with a power dissipation of 230 W (Tc). This component features a ±30V gate threshold voltage, which facilitates reliable switching performance. Encased in a TO-247 package for through-hole mounting, the TK31N60W5,S1VF accommodates operational needs in demanding environments, thanks to its robust construction and high power capacity.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.