TK2P60D(TE16L1,NV)N-Channel 600 V 2A (Ta) 60W (Tc) Surface Mount PW-MOLD
N/A
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ABRmicro #.ABR2045-TK2P60-903513
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK2P60D(TE16L1,NV)
Estimated Lead Time-
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Datasheet
TK2P60D(PDF)
TK2P60D(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberTK2P60
Continuous Drain Current (ID) @ 25°C2A (Ta)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)280 pF @ 25 V
MfrToshiba Semiconductor and Storage
Mounting StyleSurface Mount
Operating Temperature150°C
Maximum Power Dissipation60W (Tc)
RDS(on) Drain-to-Source On Resistance4.3Ohm @ 1A, 10V
Package Type (Mfr.)PW-MOLD
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.4V @ 1mA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)