TK25E60X,S1XN-Channel 600 V 25A (Ta) 180W (Tc) Through Hole TO-220
1:$2.7860
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TK25E6-1023289
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK25E60X,S1X
Estimated Lead Time24 Weeks
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 13
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 2.7860
Ext. Price$ 2.7860
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
50$2.7860$139.2940
100$2.3890$238.8500
250$2.2570$564.1880
500$2.1230$1061.4380
1250$1.8180$2272.4220
2500$1.7120$4279.2190
5000$1.6930$8462.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
2SC3325-Y,LF$0.2660
Bipolar (BJT) Transistor NPN 50 V 500 mA 300MHz 200 mW Surface Mount S-Mini
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SSM
RN2310,LF$0.1460
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70
SSM3J35CT,L3F$0.2740
P-Channel 20 V 100mA (Ta) 100mW (Ta) Surface Mount CST3SSM3K35CT,L3F$0.2560
N-Channel 20 V 180mA (Ta) 100mW (Ta) Surface Mount CST3
SSM6N62TU,LF$0.3330
Mosfet Array 20V 800mA (Ta) 500mW (Ta) Surface Mount UF6
N-Channel 30 V 24A (Ta) Surface Mount 8-TSON Advance (3.1x3.1)
Technical Specifications
SeriesDTMOSIV-H
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTK25E60
Continuous Drain Current (ID) @ 25°C25A (Ta)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2400 pF @ 300 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation180W (Tc)
RDS(on) Drain-to-Source On Resistance125mOhm @ 7.5A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 1.2mA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.com Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Toshiba TK25E60X,S1X is an N-Channel MOSFET designed for high-voltage applications, offering a drain-source voltage rating of 600 V and a continuous current rating of 25A when connected through a TO-220 package. It supports a power dissipation of 180W in optimal thermal conditions. The device features a gate-source voltage of ±30V, a gate charge capacitance of 2400 pF at 300 V, and an on-resistance of 125mOhm at 7.5A and 10V. This MOSFET is suitable for use in through-hole assembly processes, providing reliable performance with its robust electrical characteristics.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.