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TK25E06K3,S1X(SN-Channel 60 V 25A (Ta) 60W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-TK25E0-960684
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK25E06K3,S1X(S
Estimated Lead Time-
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DatasheetDatasheetMosfets Prod Guide(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesU-MOSIV
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberTK25E06
Continuous Drain Current (ID) @ 25°C25A (Ta)
Drain-to-Source Voltage (VDS)60 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)29 nC @ 10 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation60W (Tc)
RDS(on) Drain-to-Source On Resistance18mOhm @ 12.5A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Mosfets Prod Guide
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK25E06K3,S1X(S) is a N-Channel MOSFET manufactured by Toshiba Electronic Devices & Storage. It features a maximum drain-source voltage of 60 V and a continuous drain current capacity of 25A when the temperature is controlled at 25°C. Housed in a TO-220-3 package suitable for through-hole mounting, this MOSFET offers a power dissipation of 60W at the case temperature. It has a total gate charge of 29 nC when the gate-source voltage is 10 V. The device exhibits a low on-state resistance of 18 milliohms while carrying a drain current of 12.5A at a gate-source voltage of 10 V, highlighting its efficient performance in managing electrical loads.
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