TK25A60X,S5XN-Channel 600 V 25A (Ta) 45W (Tc) Through Hole TO-220SIS
1:$3.1960
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-TK25A6-940849
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK25A60X,S5X
Estimated Lead Time32 Weeks
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.1960
Ext. Price$ 3.1960
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.1960$3.1960
50$2.5330$126.6500
100$2.1720$217.1750
500$1.9300$964.7500
1000$1.6530$1653.2500
2000$1.5570$3113.1250
5000$1.5390$7692.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesDTMOSIV-H
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTK25A60
Continuous Drain Current (ID) @ 25°C25A (Ta)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2400 pF @ 300 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation45W (Tc)
RDS(on) Drain-to-Source On Resistance125mOhm @ 7.5A, 10V
Package Type (Mfr.)TO-220SIS
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 1.2mA
Package / CaseTO-220-3 Full Pack
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info@Abrmicro.com Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK25A60X,S5X is a semiconductor component manufactured by Toshiba Electronic Devices & Storage. It is an N-channel MOSFET designed for high voltage operations, featuring a 600 V drain-source voltage and a continuous current capacity of 25A at ambient temperature. Encased in a TO-220SIS package for through-hole mounting, it provides a power dissipation of 45W at case temperature. This MOSFET offers a gate charge of 40 nC at 10 V and has an on-state resistance of 125 mOhm when handling 7.5A at 10V. Its operational efficiency makes it suitable for applications requiring reliable switching performance under high power conditions.
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