TK20C60W,S1VQN-Channel 600 V 20A (Ta) 165W (Tc) Through Hole I2PAK
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ABRmicro #.ABR2045-TK20C6-918148
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK20C60W,S1VQ
Estimated Lead Time-
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 13, 2024
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Technical Specifications
SeriesDTMOSIV
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberTK20C60
Continuous Drain Current (ID) @ 25°C20A (Ta)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)48 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1680 pF @ 300 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation165W (Tc)
RDS(on) Drain-to-Source On Resistance155mOhm @ 10A, 10V
Package Type (Mfr.)I2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.7V @ 1mA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)