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TK20C60W,S1VQN-Channel 600 V 20A (Ta) 165W (Tc) Through Hole I2PAK

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ABRmicro #.ABR278-TK20C6-918148
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK20C60W,S1VQ
Estimated Lead Time-
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
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Tube
Shipping DateDecember 24, 2024
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Technical Specifications
SeriesDTMOSIV
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberTK20C60
Continuous Drain Current (ID) @ 25°C20A (Ta)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)48 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1680 pF @ 300 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation165W (Tc)
RDS(on) Drain-to-Source On Resistance155mOhm @ 10A, 10V
Package Type (Mfr.)I2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.7V @ 1mA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
PCN Obsolescence/ EOL
Mult Dev EOL 18/Oct/2018
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The TK20C60W,S1VQ is an N-channel MOSFET manufactured by Toshiba Electronic Devices & Storage, designed for high-efficiency power switching applications. It operates at a voltage of 600V and can handle a current of 20A at ambient temperature (Ta) and a power dissipation of 165W at case temperature (Tc). Housed in a through-hole I2PAK package, it features a gate threshold voltage of 3.7V at a gate current of 1mA, a gate charge of 48 nC at 10V, and can withstand gate-source voltages up to ±30V.
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