TK15A50D(STA4,Q,M)N-Channel 500 V 15A (Ta) 50W (Tc) Through Hole TO-220SIS
1:$2.5810
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ABRmicro #.ABR2045-TK15A5-984121
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK15A50D(STA4,Q,M)
Estimated Lead Time32 Weeks
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Datasheet
Mosfets Prod Guide(PDF)
Mosfets Prod Guide(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.5810
Ext. Price$ 2.5810
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.5810$2.5810
50$2.0440$102.2130
100$1.7520$175.2060
500$1.5580$778.8130
1000$1.3350$1334.5000
2000$1.2560$2511.7500
5000$1.2420$6210.3130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Seriesπ-MOSVII
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTK15A50
Continuous Drain Current (ID) @ 25°C15A (Ta)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2300 pF @ 25 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation50W (Tc)
RDS(on) Drain-to-Source On Resistance300mOhm @ 7.5A, 10V
Package Type (Mfr.)TO-220SIS
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-220-3 Full Pack
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The TK15A50D(STA4,Q,M) is a discrete N-Channel MOSFET manufactured by Toshiba Electronic Devices & Storage. It is designed for high-voltage applications, offering a drain-source voltage of 500 V and a continuous drain current of up to 15 A when properly mounted (Ta). The device features a maximum power dissipation of 50 W when used with an appropriate heat sink (Tc). Housed in a TO-220SIS through-hole package, it has a gate threshold voltage of 4V at 1mA and an on-resistance of 300 mOhm at 7.5A, 10V. The gate charge is measured at 40 nC at 10 V, making it suitable for efficient switching operations.
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