TK14N65W5,S1FN-Channel 650 V 13.7A (Ta) 130W (Tc) Through Hole TO-247
1:$2.4870
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ABRmicro #.ABR2045-TK14N6-1020823
ManufacturerToshiba Electronic Devices & Storage
MPN #.TK14N65W5,S1F
Estimated Lead Time52 Weeks
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Datasheet
TK14N65W5(PDF)
TK14N65W5(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.4870
Ext. Price$ 2.4870
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.4870$2.4870
30$1.9730$59.1920
120$1.6920$202.9800
510$1.6540$843.6990
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesDTMOSIV
Packaging
Tube
Lifecycle StatusActive
Base Product NumberTK14N65
Continuous Drain Current (ID) @ 25°C13.7A (Ta)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1300 pF @ 300 V
MfrToshiba Semiconductor and Storage
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation130W (Tc)
RDS(on) Drain-to-Source On Resistance300mOhm @ 6.9A, 10V
Package Type (Mfr.)TO-247
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 690µA
Package / CaseTO-247-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Toshiba Electronic Devices & Storage part TK14N65W5,S1F is a TO-247 packaged N-Channel MOSFET designed to handle up to 650 volts and 13.7 amperes. It has a power dissipation capacity of 130 watts when attached to a suitable heat sink (measured at Tc), indicating its capability to manage substantial power loads. The device features a total gate charge of 1300 picofarads at 300 volts, and it operates with a gate-source voltage rating of 10 volts, with a gate threshold voltage tolerance of ±30 volts. This specification highlights its suitability for high-voltage applications where reliable switching performance is required.
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